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| EIC1414-8 ISSUED 6/30/2006 14.0-14.5 GHz 8-Watt Internally Matched Power FET FEATURES * * * * * * 14.0- 14.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 5.0 dB Power Gain at 1dB Compression 24% Power Added Efficiency Hermetic Metal Flange Package .060 MIN. Excelics EIC1414-8 .060 MIN. .650.008 .512 GATE .319 DRAIN .022 .094 .382 .004 .129 .045 .070 .008 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 14.0-14.5GHz VDS = 10 V, IDSQ 2200mA Gain at 1dB Compression f = 14.0-14.5GHz VDS = 10 V, IDSQ 2200mA Gain Flatness f = 14.0-14.5GHz VDS = 10 V, IDSQ 2200mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ 2200mA f = 14.0-14.5GHz Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance3 2) S.C.L. = Single Carrier Level. Caution! ESD sensitive device. MIN 38.5 4.0 TYP 39.0 5.0 MAX UNITS dBm dB 0.6 24 2300 4000 -2.5 3.5 2600 5000 -4.0 4.0 o dB % mA mA V C/W f = 14.0-14.5GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 40 mA Note: 1) Tested with 100 Ohm gate resistor. 3) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 15 -5 86.4mA -14.4mA 38.5dBm o 175 C o -65 to +175 C CONTINUOUS2 10V -4V 28.8mA -4.8mA @ 3dB Compression 175 oC -65 to +175 oC 38W Vds Vgs Igsf Igsr Pin Tch Tstg Pt 38W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised June 2006 |
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